Metrology for wide bandgap semiconductors

A semiconductor chip amidst glowing circuitry.

Power Electronics is a key technology enabling Transport Electrification, Smart Power Grids, increase in Renewable Energy Generation and Next-Generation Communications. The adoption of new compound semiconductor materials (Silicon Carbide, Gallium Nitride, and Gallium Oxide) will dramatically increase the efficiency of energy use and accelerate uptake of carbon-reducing technologies. Realising these benefits at scale requires new measurement techniques and international standards to assure the quality and reliability of products.

The aim of this course is to introduce the audience to metrology for wide bandgap semiconductors that are commonly used in power electronics applications. The course presents compound semiconductors such as SiC, GaN, other relevant materials and their features and processing steps. Common characterisation methods such as photoluminescence spectroscopy and ellipsometry are presented from the aspect of wide bandgap semiconductor characterisation and advanced measurement methods and schemes are introduced.

The course is aimed at the semiconductor industry, measurement labs, researchers and students working in instrument development, industrial R&D, research institutes and universities.

Learning Outcomes

After this course, learners will:

  • Be aware of common wide bandgap materials and their respective physical properties.
  • Understand the features and properties of silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3) and use in power electronics.
  • Be familiar with common methods used in the measurement and characterisation of wide bandgap semiconductors.